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    Please use this identifier to cite or link to this item: https://ir.csmu.edu.tw:8080/ir/handle/310902500/18223


    Title: Preparation and characterization of single crystalline In-Sn oxide nanowires
    Authors: Shi, J.-B.;Wu, P.-F.;Lin, Y.-T.;Chen, Chen C.-J.;Kao, C.-T.;Lin, H.-S.;Lee, H.-W.;Liu, H.-H.;Lee, M.-W.;Chen, Chen C.-Y.;Young, S.-L.;Kao, M.-C.;Kang, T.-K.;Lin, C.-L.;Yang, P.-C.;Yang, S.-Y.
    Keywords: Crystal structure;Nanomaterials;Nanostructures;Oxides
    Date: 2015
    Issue Date: 2017-08-09T04:42:08Z (UTC)
    Publisher: Elsevier Ltd
    ISSN: 0042207X
    Abstract: Indium tin oxide (ITO; Indium oxide with tin doping) nanowires were first prepared via the electrochemical deposition and an oxidization method based on an AAO template. FE-SEM results show the synthesized ITO nanowires to have an approximate length of 8-10 μm with an aspect ratio close to 167. ITO nanowires with an In/Sn weight ratio of 8.8 (∼9:1) were observed from EDS. The crystal structure of ITO nanowires showed that all the peaks within the spectra can be indexed to In<inf>2</inf>O<inf>3</inf> with a cubic structure. The ITO nanowire is single-crystalline determined from selected area electron diffraction (SAED) patterns. An optical energy gap (E<inf>g</inf>) of the ITO nanowire is 3.8 eV.
    URI: http://dx.doi.org/10.1016/j.vacuum.2015.04.011
    https://www.scopus.com/inward/record.uri?eid=2-s2.0-84928110664&doi=10.1016%2fj.vacuum.2015.04.011&partnerID=40&md5=2f7c577137e54795252decd438894b00
    https://ir.csmu.edu.tw:8080/ir/handle/310902500/18223
    Relation: Vacuum 117 ,50-54
    Appears in Collections:[牙醫學系暨碩士班] 期刊論文

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